Physical Review B · 2008 · 41 citations · 17 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSolid State PhysicsSurface ScienceElectronic Band StructurePhase TransitionsSemiconductor PhysicsSolid-state Phase TransitionsSurface Phase TransitionsAngle-resolved Photoelectron SpectroscopyAngle-resolved Photoemission SpectroscopyBand Gap EnergyChainsElectronic Phase TransitionsEnergy Band GapMetal-insulator TransitionPeierls Transition
We have performed high-resolution angle-resolved photoemission spectroscopy on quasi-one-dimensional indium chains on the Si(111) surface to study the temperature-induced metal-insulator (MI) transition accompanied by the $4\ifmmode\times\else\texttimes\fi{}1$ to $8\ifmmode\times\else\texttimes\fi{}2$ structural change. The band dispersion near ${E}_{F}$ shows an abrupt change at $120\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, giving a relatively large energy gap compared to the energy scale of the transition temperature. The band dispersion of the $8\ifmmode\times\else\texttimes\fi{}2$ phase shows no discernible temperature evolution, in sharp contrast to the conventional simple Peierls or structural transition. The experimental results suggest that the Peierls instability is important in the MI transition, while other structural effects are cooperatively involved.
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An Exactly Soluble Model of a Many-Fermion System
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Mechanism of Gap Opening in a Triple-Band Peierls System: In Atomic Wires on Si
Joung Real Ahn, J. H. Byun, H. Koh et al. · Physical Review Letters · 2004 · 141 citations