Advances in schottky rectifier performance

Abstract

In conclusion, heteroepitaxial technology has delivered a new device building block for the microwave and millimeter-wave toolbox - a single-crystal Schottky barrier diode made from a lattice matched combination of a semimetal (ErAs) and a semiconductor (InAlGaAs). This article has demonstrated how sensitive such a Schottky diode can be as a room-temperature zero-bias rectifier up to W band and addressed the fundamental device and impedance matching issues when coupled to a planar antenna in a quasi-optical package. As might be expected, the new Schottky diodes also display a very low degree of 1/f noise when used in applications that require bias or large signals, such as frequency mixers and multipliers (Young et al., 2006)