Microchannel heat sinks for two-dimensional high-power-density diode laser arrays

Abstract

The operation of a two-dimensional GaInAsP/InP diode laser array with CW power dissipation up to 500 W/cm/sup 2/ into a Si microchannel heat sink is discussed. The approximately 1*4-mm/sup 2/ laser array was used to characterize the heat sink, and the value of 0.040 degrees C cm/sup 2//W was obtained for the thermal resistance per unit area. The extrapolated value for a 1-cm/sup 2/ heated area is 0.070 degrees C cm/sup 2//W.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>