Annealing effects on relationships between E.S.R., electrical and optical properties in a-Si : H

Abstract

Abstract The relationships between photo- and dark-conductivities, E.S.R. spin density and linewidth, optical absorption and hydrogen vibrational spectra have been investigated for glow-discharge amorphous Si : H films annealed at various temperatures. A strong correlation is found between the photoconductivity and the E.S.R. linewidth. A model is proposed for the recombination process, and the photoconductivity is associated with the local density of electrons which determines the linewidth. The difference between the activation energies in the photo- and dark-conductivities is observed to be independent of annealing temperature, and is discussed in terms of this proposed model.