Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics

Abstract

The effect on the thermal and dielectric properties of incorporating benzene rings in hydrogenated amorphous carbon (a-C:H) films was investigated. The benzene rings were introduced into a-C:H films by using plasma-enhanced chemical vapor deposition and aromatic source compounds. The a-C:H film that contained benzene rings had thermal stability up to 400 °C and a low-dielectric constant of 3.0. The difference in the dielectric constant and thermal stability of a-C:H films appeared to be due to the hydrogen concentration of the films.