Journal of Applied Physics · 2002 · 32 citations · 9 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsMicrowave EngineeringHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave MeasurementsMicrowave Semiconductor DevicesWaveguidesHigh-frequency CharacterizationHigh-frequency OperationLarge-signal BehaviorLarge-signal Device ModelingMicrowave DevicesNonlinear Device CharacterizationSmall-signal Device ModelingSmall-signal Modeling
We report comprehensive microwave measurements on a T-branch switch; a GaInAs/InP electron waveguide based structure. The study includes a small signal model of the device where limitations of high frequency operation are discussed. An example of large signal operation where the nonlinearity of the device is exploited by operating the T-branch switch as a frequency multiplier is demonstrated.
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Electrical properties of three-terminal ballistic junctions
H. Q. Xu · Applied Physics Letters · 2001 · 166 citations
Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions
Ivan Shorubalko, H. Q. Xu, Ivan Maximov et al. · Applied Physics Letters · 2001 · 142 citations
Bias-voltage-induced asymmetry in nanoelectronic <i>Y</i>-branches
L. Worschech, H. Q. Xu, A. Forchel et al. · Applied Physics Letters · 2001 · 107 citations