Bias-voltage-induced asymmetry in nanoelectronic <i>Y</i>-branches

Abstract

Pronounced asymmetries of electrical properties are observed in nanoelectronic, symmetric GaAs/AlGaAs Y-branches. Finite voltages Vl and Vr applied to the left- and right-hand side branch reservoir of a symmetric, ballistic Y-branch switching device in push–pull fashion (i.e., Vl=−Vr) lead to a negative output voltage Vs of the floating, central stem reservoir located between the two branches. We explain our observations exploiting the ballistic nature of the electron transport in the device.