Strained-layer InGaAs/InGaAsP MQW structures and their application to 1.67 μm lasers grown by metalorganic vapor phase epitaxy

Defects in epitaxial multilayers I. Misfit dislocations

Jacqueline M. Matthews · Journal of Crystal Growth · 1974 · 3.1K citations

Natural Sciences, Materials Engineering, Materials Science +14

Material parameters of In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> and related binaries

Sadao Adachi · Journal of Applied Physics · 1982 · 770 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reduction of lasing threshold current density by the lowering of valence band effective mass

Eli Yablonovitch, E. O. Kane · Journal of Lightwave Technology · 1986 · 450 citations

Engineering, Electrical Engineering, Materials Science +17

X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers

W. Bartels, W. Nijman · Journal of Crystal Growth · 1978 · 238 citations

Natural Sciences, Materials Engineering, Materials Science +11

X-ray diffraction from one-dimensional superlattices in GaAs_1−<i>x</i>P_<i>x</i>crystals

A. Segmüller, A. E. Blakeslee · Journal of Applied Crystallography · 1973 · 213 citations

Natural Sciences, Materials Science, Physics +17