Field-effect modulation of contact resistance between carbon nanotubes

Abstract

Local transport properties of a carbon nanotube (CNT) thin-film transistor (TFT) have been investigated by conducting atomic force microscopy. The current in a CNT bundle is almost constant, whereas it drastically decreases at the contacts between CNTs. Current drops at the contacts are reduced with increasing negative gate voltage VG. The results show that the contact resistance between CNTs can be modified by VG, and the operation of CNT-TFT is mainly governed by the modulation of contact resistance.