Applied Physics Letters · 1987 · 27 citations · 11 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptical MaterialsOptoelectronicsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsDopingOptical Properties Of SemiconductorsSemiconductor PhysicsActivation EnergyAmorphous SiliconDoped SemiconductorsDoping BehaviorDoping In Thin FilmsHydrogenated Amorphous SiliconSilicon DopingSilicon Optical Properties
Boron-doped hydrogenated amorphous silicon deposited at 100 °C exhibits a decrease of dark conductivity and an increase of doping efficiency, simultaneously, during band-gap light illumination. We prove that these two effects are bulk effects and that their origins are different. The decrease in dark conductivity is due to the creation of dangling bonds. On the other hand, the increase in doping efficiency anneals out with an activation energy of 1.66 eV. The increase in stretching mode absorption of boron-hydrogen has been observed after light soaking for the amorphous silicon-boron alloy film, and this appears to be related with the increase in doping efficiency of boron.
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Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
J. I. Pánkové, David Carlson, J. E. Berkeyheiser et al. · Physical Review Letters · 1983 · 455 citations
Thermal-equilibrium processes in amorphous silicon
R. A. Street, J. Kakalios, C. C. Tsai et al. · Physical review. B, Condensed matter · 1987 · 334 citations
Hydrogen localization near boron in silicon
J. I. Pánkové, P. J. Zanzucchi, C. W. Magee et al. · Applied Physics Letters · 1985 · 290 citations
Natural Sciences, Chemistry, Physics +17