Journal of The Electrochemical Society · 2005 · 90 citations · 16 references
EngineeringChemical EngineeringChemistryMaterials ProcessingReaction EngineeringWastewater TreatmentKinetic ModelingMetallurgical KineticsPolishing OperationsSurface Reaction KineticsChemical Degradation KineticsCopper MetallurgyMechanical PolishingMetal Removal RatePolishingPolishing ProcessesRemovalSlurries
A model of copper chemical mechanical polishing (CMP) based on methods of chemical kinetics is presented which includes both chemical and mechanical processes. This CMP model explains observed patterns in removal rates for peroxide and nonperoxide-based slurries as a function of oxidizer concentration, polishing pressure and speed, etchant concentration, and pH.
16
Copper interconnection integration and reliability
C.‐K. Hu, B. M. Luther, F. B. Kaufman et al. · Thin Solid Films · 1995 · 224 citations