Journal of Applied Physics · 1975 · 39 citations · 4 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSurface ScienceThin FilmsAluminum OxidesMetal OxidesOxide SemiconductorsPhotoelectron SpectroscopyEquivalent Oxide ThicknessFilm ThicknessOxide Thickness MeasurementThin Oxide FilmsThin-film Oxides
Photoelectron emission from Al and Ni has been performed under atmospheric condtions. Measurements of photoemission current Ip as a function of oxide thickness yield attenuation lengths of 28 Å for Al2O3/Al and 71 Å for NiO/Ni for λ=2500 Å (∼5 eV). Photoemission from Al2O3/Al originates at the metal and is only attenuated by the oxide unless the oxide is bombarded with Ar+. After ion bombardment the oxide also emits electrons. Photoemission from NiO/Ni originates from the oxide for λ=2500 Å. Estimates of oxide film thickness can be made for very thin films (0∼200 Å) by very simple photoemission measurments in air.
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<i>Basic Processes of Gaseous Electronics</i>
Leonard B. Loeb, David J. Rose · Physics Today · 1956 · 621 citations
Electron Emission from Thin Al-Al2O3-Au Structures
H. Kanter, W. A. Feibelman · Journal of Applied Physics · 1962 · 94 citations