Organic field effect transistors based on modified oligo-p-phenylevinylenes

Abstract

We report on an organic field effect transistor device based on a modified oligomer oligo-p-phenylevinylene, 1,4-bis[4-(4-octylphenyl)styryl]-benzene. The effect of growth temperature on the morphology of the organic films and their electrical properties was investigated. Substrates coated with hexamethyldisilazane prior to organic film deposition showed improved electrical characteristics, but a negligible difference with respect to film morphology. A maximum hole mobility of μ=0.12 cm2/V s with an on–off current ratio Ion/off>106 were measured in films deposited at a substrate temperature of 150 °C.