Liquid phase epitaxial growth of lattice-matched Al0.48In0.52As on InP

Abstract

The liquid phase epitaxial (LPE) growth condition to obtain lattice-matched Al0.48In0.52As on (100) InP was found. Using this growth condition, smooth and lattice-matched Al0.48 In0.52As layers could be grown for the first time on InP by the LPE method. The growth temperature near 800 °C was necessary to grow the ternary epitaxial layers. It was found by photoluminescence measurements that the energy gap of lattice-matched Al0.48 In0.52As was 1.42 eV.