Applied Physics Letters · 2012 · 29 citations · 11 references
Materials ScienceSemiconductorsIi-vi SemiconductorTransition Metal ChalcogenidesEngineeringDiffusion ResistanceZn65 Diffusion ProfilesZinc DiffusionApplied PhysicsCondensed Matter PhysicsSolid-state ChemistrySemiconductor MaterialEpitaxial Cuinse2Diffusion BehaviorChemistryLayered MaterialSolar Cell Materials
The diffusion behavior of Zn in solar-grade Cu(In,Ga)Se2 (CIGSe) is found to be similar to that in epitaxial CuInSe2 (CISe), which indicates that grain boundaries only play a minor role as segregation sites and fast-transport pathways. The diffusivity obeys the Arrhenius equation DZn = 3.8 × 10−3exp(−1.24 eV∕kBT) cm2 s−1. Surprisingly, the Zn65 diffusion profiles obtained by the radiotracer technique exhibit anomalous shapes with a second maximum near the CI(G)Se-substrate interface. The observations may be indicative of an interstitial-substitutional diffusion mechanism.
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Diffusion and incorporation of Cd in solar-grade Cu(In,Ga)Se2 layers
K. Hiepko, J. Bastek, Ralf Schlesiger et al. · Applied Physics Letters · 2011 · 38 citations