In-plane hole effective masses in In<i>x</i>Ga1−<i>x</i>As/Al0.15Ga0.85As modulation-doped heterostructures

Abstract

We have determined the strain dependence of the in-plane hole effective mass in pseudomorphic Inx Ga1−x As/Al0.15 Ga0.85As modulation-doped heterostructures by low-temperature Shubnikov–de Haas measurements. An effective mass equal to 0.18m0 is measured for x=0.2. The measured values are in good agreement with theoretical calculations.