Growth and Some Properties of Heterostructures Based on New Narrow-Gap Semiconductor ZnCdHgTe

P. Sydorchuk, G. Khlyap, A. M. Andrukhiv

Crystal Research and Technology · 2001 · 15 citations · 0 references

Concepts

Abstract

Growth technology of new narrow-gap semiconductor solid solution ZnCdHgTe proposed as an alternative material to CdHgTe due to the stabilizing effect of Zn-Hg bond in the lattice of the compound is presented. Results of electrical examinations performed at the first time for the heterostructures based on ZnCdHgTe are also reported.