Hydrogenated Amorphous Silicon Produced by Pyrolysis of Disilane in a Hot Wall Reactor

Abstract

Deposition kinetics and physical properties of hydrogenated amorphous silicon produced by low-pressure chemical vapor deposition of disilane have been investigated as a function of substrate temperature using a hot wall type reactor. The high growth rate of more than 8 A/sec has been achieved at a substrate temperature of 450°C and the hydrogen content is about 9 at.%. The optical bandgap never exceeds 1.6 eV even for a hydrogen content of 18 at.% and the spin density is as low as ∼10 16 cm -3 .