Physical SEU model for circuit simulations

Abstract

A single-event-upset (SEU) model of a bipolar transistor based on device and ion-track physical parameters has been incorporated into standard SPICE. The model can predict the current/voltage waveforms of SEU in bipolar transistors and flip-flops. This model has been experimentally verified for bipolar transistors in several configurations under many bias conditions and subjected to more than five ion types (Kr, Br, Ar, N, He, etc.). The experimental SEU thresholds of six different flip-flops also agree within 50% of the simulations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>