Drift Mobilities in Semiconductors. II. Silicon

Abstract

The drift mobility of holes in $n$-type silicon and electrons in $p$-type silicon has been measured as functions of impurity concentration and temperature. In single crystals of resistivity greater than 10 ohm-centimeter, the mobility at 300\ifmmode^\circ\else\textdegree\fi{}K of holes is ${\ensuremath{\mu}}_{P}=500\ifmmode\pm\else\textpm\fi{}50$ ${\mathrm{cm}}^{2}$/volt-sec and of electrons is ${\ensuremath{\mu}}_{N}=1200\ifmmode\pm\else\textpm\fi{}100$ ${\mathrm{cm}}^{2}$/volt-sec. For this high-resistivity material, the temperature dependence of mobility in the same units is ${\ensuremath{\mu}}_{N}=5.5\ifmmode\times\else\texttimes\fi{}{10}^{6}{T}^{\ensuremath{-}1.5}$ and ${\ensuremath{\mu}}_{P}=2.4\ifmmode\times\else\texttimes\fi{}{10}^{8}{T}^{\ensuremath{-}2.3}$.