TiN formed by evaporation as a diffusion barrier between Al and Si

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation C. Y. Ting; TiN formed by evaporation as a diffusion barrier between Al and Si. J. Vac. Sci. Technol. 1 May 1982; 21 (1): 14–18. https://doi.org/10.1116/1.571700 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science and Technology Search Advanced Search |Citation Search