Transport properties of tungsten-doped VO₂

Abstract

Measurements of DC and AC conductivity and thermopower show that VO 2 : W can be treated as a conventional n-type extrinsic semiconductor with a donor level 0.06–0.08 eV below the conduction band. For samples with an impurity content from 0.67 → 1.70 at.% W, an effective mass ratio m*/m of 65 ± 10 and a compensation ratio of 0.7 ± 0.1 are deduced from conventional semiconductor theory assuming donor exhaustion just below the metal semiconductor transition.