High Performance Field‐Effect Ammonia Sensors Based on a Structured Ultrathin Organic Semiconductor Film

Abstract

High performance organic field-effect transistor (OFET)-based ammonia sensors are demonstrated with ultrathin (4-6 molecular layers) dendritic microstripes of an organic semiconductor prepared via dip-coating. These sensors exhibit high sensitivity, fast response/recovery rate, good selectivity, low concentration detection ability, and reliable reversibility, as well as stability. Such a performance represents great progress in the field of OFET-based sensors.