Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism

Abstract

Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model.