P‐41: Investigation of the Photon‐Enhanced Bias Instability of InGaZnO TFTs for the Application of Transparent AM‐OLED Displays

Abstract

Abstract We investigated the effect of the light‐induced bias instability of indium‐gallium‐zinc oxide(IGZO) thin film transistors. The IGZO TFT exhibited the excellent subthreshold gate swing of 0.12V/decade, Vth of −0.5V, and high Ion/off ratio of >10 9 as well as a high field‐effect mobility of 26.7 cm 2 /Vs. The Vth is not changed after positive bias illumination stress (PBIS) for 10000sec. However, the Vth is −8V after negative bias illumination stress (NBIS)for 10000sec. This phenomenon can be attributed the trapping of the photon‐induced charges into the gate dielectric/active interface. We fabricated transparent AM‐OLED driven by highly stable bottom gate IGZO TFT array