Applied Physics Letters · 1996 · 37 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsNanoelectronicsQuantum TunnelingWide Band Gap SemiconductorsAnodic Aluminum OxideAnodizationCarrier Tunneling Across InterfacesMiniaturizationScatteringSingle-electron TransistorsTunnel Junctions
We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes.