Journal of Photopolymer Science and Technology · 1997 · 11 citations · 0 references
Natural SciencesMaterials EngineeringMaterials SciencePolymer ChemistryPolymer EngineeringPolymer MaterialsOptical PolymersOptoelectronic MaterialsPhotonic MaterialsPolymer CharacterizationPolymer Physical ChemistryDry EtchingExcimer LasersPhotopolymer MaterialsPhotoresistsPolymethyl MethacrylateThermal StabilityThermal Stability AnalysisTransparency
A new positive chemically amplified resist which consists of novel methacrylate terpolymer with bis(trimethylsilyl)isopropyl group and a photoacid generator has been developed for ArF excimer laser photoresists. The polymer structure and properties was evaluated by 1H-NMR, UV, FT-JR. DSC, TGA and GPC. This new terpolymer demonstrates good thermal stability up to 135°C, good dry-etching resistance, high transparency (75%) for a ArF excimer laser exposure. Preliminary line and space patterns were obtained using an ArF excimer laser exposure system.