Single target sputtering of superconducting YBa2Cu3O7−δ thin films on Si (100)

Abstract

Thin films of YBa2Cu3O7−δ have been grown on (100) silicon substrates by single target rf diode sputtering. Yttria-stabilized zirconia buffer layers were used to minimize substrate-film reactions. Off-stoichiometric targets were used to compensate for differences between film and target stoichiometries. The composition of the superconducting layer is also influenced by post-deposition anneals, with films closer to the desired stoichiometry resulting from the higher temperature anneals. Film thicknesses spanned the 0.5–2.0 μm range and the onset and zero resistance ( ρ<10−7 Ω cm) temperatures were found to be 95 and 70 K, respectively, for 1.8-μm-thick films.