The formation of interface at room and high temperatures

Growth of single crystal epitaxial silicides on silicon by the use of template layers

R. T. Tung, J. M. Gibson, J. M. Poate · Applied Physics Letters · 1983 · 148 citations

Natural Sciences, Materials Engineering, Materials Science +17

Surface phases on silicon

V.G. Lifshits, Yu. L. Gavrilyuk, D. A. Tsukanov · Physics-Uspekhi · 2000 · 107 citations

Natural Sciences, Materials Engineering, Materials Science +12

Localized epitaxial growth of MnSi1.7 on silicon

Yiling Lian, L. J. Chen · Applied Physics Letters · 1986 · 69 citations

Engineering, Materials Engineering, Materials Science +15

Silicon–refractory metal interfaces: Evidence of room-temperature intermixing for Si–Cr

A. Franciosi, D. J. Peterman, J. H. Weaver · Journal of Vacuum Science and Technology · 1981 · 34 citations

Engineering, Materials Engineering, Materials Science +17

Angle resolved ultraviolet photoelectron spectroscopy study of ultrathin iron films on Si(111) surfaces

Toshio Urano, Takashi Ogawa, Tōru Kanaji et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1987 · 27 citations

Natural Sciences, Materials Science, Physics +15