High field sensitivity at room temperature in p-n junction based bilayered manganite devices

Abstract

The thickness dependent current-voltage (I-V) properties of the bilayered La0.6Pr0.2Sr0.2MnO3 (LPSMO)∕Nb-SrTiO3 (SNTO) p-n junction devices having two different thicknesses, grown using pulsed laser deposition (PLD) technique, have been studied. The I-V curves of these bilayered junctions show good rectifying behavior and also exhibit large positive magnetoresistance (MR) at room temperature. The p-n junction having LPSMO thickness of 200nm exhibits low saturation voltage (VC) and high positive MR as compared to junction with 100nm p-type LPSMO layer. Distinct feature such as large positive MR with respect to temperature can be understood in terms of thickness dependent modifications in the film-substrate interface.