Crystal Research and Technology · 2005 · 15 citations · 2 references
EngineeringSemiconductor MaterialsNucleation LayerPhotovoltaicsSemiconductor DeviceSemiconductorsIi-vi SemiconductorTriple Junction Ingap/Solar Cell StructuresSubstrate Specification SelectionCompound SemiconductorMaterials ScienceSemiconductor TechnologyElectrical EngineeringSemiconductor MaterialSemiconductor Device FabricationApplied PhysicsBottom CellsSolar CellsOptoelectronicsSolar Cell Materials
Abstract The paper discusses the problems of nucleation layer and substrate specification selection for a bottom Ge cell performance. GaAs/Ge, AlGaAs/Ge and InGaP/Ge heterojuctions have been compared showing how lattice matching and dopant interdiffusion control are key aspects for improving the Ge bottom cell photovoltaic response. The influence of substrates orientation, polarity and resistivity on the electrical performances of the bottom cells are presented. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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