Applied Physics Letters · 1987 · 70 citations · 5 references
EngineeringElectrical EngineeringCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice ModelingElectron TransportElectronic Transport ModelingIii-v SemiconductorsSemiconductor PhysicsCarrier ConcentrationCarrier DynamicsCarrier Transport In SemiconductorsCarrier Transport ModelingEffective MassElectron Transport In SemiconductorsInelastic ScatteringTransport In Semiconductors
The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority-carrier elastic and inelastic scattering rates as a function of energy for different majority-carrier concentrations in typical p-type III-V semiconductors. Scattering rates depend on the majority-carrier concentration and a constraint involving the ratio of electron and heavy-hole effective mass.
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Base transport dynamics in a heterojunction bipolar transistor
J. R. Hayes, A. F. J. Levi, A. C. Gossard et al. · Applied Physics Letters · 1986 · 30 citations