Chemical doping of graphene

TLDR

Graphene’s performance and electrical properties have been intensively studied. The article reviews chemical doping strategies to tune graphene’s electronic properties. It examines p‑type and n‑type doping via surface transfer or substitutional methods, and discusses band‑gap tuning applications. Such doping is expected to enable high‑performance electronic devices.

Abstract

Recently, a lot of effort has been focused on improving the performance and exploring the electric properties of graphene. This article presents a summary of chemical doping of graphene aimed at tuning the electronic properties of graphene. p-Type and n-type doping of graphene achieved through surface transfer doping or substitutional doping and their applications based on doping are reviewed. Chemical doping for band gap tuning in graphene is also presented. It will be beneficial to designing high performance electronic devices based on chemically doped graphene.