Electronics Letters · 1995 · 14 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical SourcesQuantum Well DevicesSemiconductor LasersWide Band Gap SemiconductorsWide-bandgap SemiconductorsHeterostructure LasersHigh-power Semiconductor LasersNear-infrared Laser DiodesOptical Gain In SemiconductorsPower OutputQuantum Well LasersSemiconductor Laser DiodesVertical-cavity Surface-emitting Lasers
Near-infra-red (760–780 nm) vertical-cavity surface-emitting laser (VCSEL) diodes with GaInAsP-based active-region heterostructures are demonstrated for the first time. The devices consist of GaInAsP/GaInP/AlGaInP-based quantum-well active regions and AlAs/Al0.25Ga0.75As distributed Bragg reflectors. Different-sized devices emitting in the 760–780 nm-wavelength range exhibit threshold currents in the 3–10 mA range, threshold voltages of 2.1 V and peak power output > 4 mW.
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High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
D. Z. Garbuzov, N.Y. Antonishkis, A. D. Bondarev et al. · IEEE Journal of Quantum Electronics · 1991 · 155 citations