physica status solidi (b) · 1973 · 18 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsAtomic ExcitationElectronic Excited StatesFluorescence SpectroscopyLuminescent MaterialsWide Band Gap SemiconductorsBand GapExcitationExciton-phonon CouplingExcitonsLuminescence MechanismsOptical Band GapPhotoluminescencePhotoluminescence Spectroscopy
Abstract Donor‐acceptor pair luminescence and radiation of bound excitons have been excited in GaP using radiation with photon energies lower than the band gap. This anti‐Stokes luminescence is explained by a two‐step excitation process via the deep donor oxygen. Excitation with radiation lower than the band gap results in a very low homogeneous excitation density throughout the bulk of the sample and enables the investigation of the phonon structure of the donor‐acceptor pair bands.
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Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
D. G. Thomas, J. J. Hopfield · Physical Review · 1966 · 595 citations
Natural Sciences, Chemistry, Physics +17
New Red Pair Luminescence from GaP
C. H. Henry, P. J. Dean, J. D. Cuthbert · Physical Review · 1968 · 215 citations
Natural Sciences, Chemistry, Physics +17