Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar ($20\bar{2}\bar{1}$) Blue Light-Emitting Diodes

Abstract

We report on the thermal performance of the electroluminescence of 12-nm-thick single-quantum-well (SQW) InGaN blue light-emitting diodes (LEDs) grown on the semipolar (2021) plane. At a current density 100 A/cm2, the external quantum efficiency (EQE) decreased by 9.7% when the temperature was increased from 20 to 100 °C. Hot/cold factors were more than 0.9 at current densities greater than 20 A/cm2. A high characteristic temperature of 900 K and low junction temperature of 68 °C were also measured using bare LED chips.