Radiative recombination lifetime measurements of InGaN single quantum well

Abstract

We present results from a time-resolved study of radiative recombination in InGaN quantum wells. The sample was grown by atmospheric pressure metal-organic chemical-vapor deposition. Time-resolved photoluminescence measurements were performed from 7 K up to room temperature. The low temperature radiative lifetime was measured to be on the order of 250 ps at a generated carrier density of 1012 cm−2. The time-resolved measurements show a bimolecular recombination characteristic. At 300 K, we observed a lifetime of 130 ps which, to the best of our knowledge, is the longest lifetime reported for any III–V nitride at room temperature.