Publication | Open Access
“Charge Leakage” at LaMnO<sub>3</sub>/SrTiO<sub>3</sub> Interfaces
122
Citations
23
References
2009
Year
Materials ScienceCharge LeakageMaterial AnalysisEngineeringFerroelectric ApplicationNanoelectronicsStress-induced Leakage CurrentOxide ElectronicsApplied PhysicsSuperconductivitySharp InterfacesGallium OxideOxide DevicesCharge SeparationEpitaxial GrowthCharge Transport
Direct evidence for charge leakage at the interface of epitaxial SrTiO3/LaMnO3 superlattices with atomically sharp interfaces is provided. The direction of charge leakage can be reversed by changing the LMO/STO thickness ratio. This result will be important for the understanding of some of the reported limitations of oxide devices involving manganite/titanate interfaces.
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