Molecular Caulking

Abstract

Porosity has been introduced in existing low-k interlayer dielectrics to further reduce their dielectric constant. It is desirable to deposit a metallic layer on top of the porous dielectric by chemical vapor deposition (CVD). However this presents the challenge of preventing the precursor from penetrating into the porous dielectric and depositing metal within this insulating layer. In the present paper a low-k CVD polymer capping (Molecular Caulking™) is deposited at room temperature onto the porous ultralow k dielectric methyl silsesquioxane. Experiments show that the Molecular Caulking prevents precursor penetration during subsequent metallorganic CVD. In addition, while the Molecular Caulking itself slightly penetrates into the methyl silsesquioxane, it does not appreciably increase surface roughness or film dielectric constant. © 2004 The Electrochemical Society. All rights reserved.