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New junctionless RADFET dosimeter design for low‐cost radiation monitoring applications
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2013
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Device ModelingElectrical EngineeringElectromagnetic CompatibilityEngineeringRadiation DetectionHealth SciencesSemiconductor DeviceElectronic EngineeringApplied PhysicsQuantitative AnalysisThreshold VoltageInstrumentationRadiation ImagingRadiation OncologyJl Gaa RadfetRadiologyMicroelectronics
Abstract This paper is devoted to the presentation of a quantitative analysis of the Junctionless Gate All Around RADFET (JL GAA RADFET) dosimeter, where the numerical simulation has been carried out using the Atlas 3‐D simulator. The impact of the total dose, alternative gate materials and the channel doping on the threshold voltage of the JL GAA RADFET is addressed. The obtained results have indicated a significant improvement in the subthreshold parameters when compared to the conventional GAA RADFET dosimeter. Therefore, the implementation of junctionless‐based sensors in the near future can provide more accurate results with low costs, in addition to alleviating many difficulties in the measurement procedure. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)