2002 · 14 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptical MaterialsOptoelectronicsThermal AnalysisLaser DiodesLaser OpticsLaser PhysicsSemiconductor LasersStrain EngineeringThermal Properties Of MaterialsDifferential GainGainLaser Gain MaterialsLasersOptical Gain MaterialsQuantum Well LasersRelaxation OscillationsTemperature Dependence
Differential gain (dg/dn) of AlGaInAs strained MQW lasers was estimated from relaxation oscillation frequency (fr), and compared with that of GaInAsP lasers. The estimated dg/dn of the AlGaInAs laser was 1.1/spl times/10/sup -15/ cm/sup 2/ at 25/spl deg/C, which was 1.4 times larger than that of the GaInAsP laser. The AlGaInAs laser also showed less temperature dependence of dg/dn. The degradation of dg/dn in 25-85/spl deg/C was only 28%, while that of the GaInAsP laser was 51%.
5
Chung-En Zah, R. Bhat, Bhadresh Pathak et al. · IEEE Journal of Quantum Electronics · 1994 · 338 citations
Low-threshold and high-temperature operation of InGaAlAs-InP lasers
T.R. Chen, P.C. Chen, J. Ungar et al. · IEEE Photonics Technology Letters · 1997 · 54 citations