Properties of Ga_1-xIn_xN Films Prepared by MOVPE

Abstract

Epitaxial films of the solid solution Ga 1- x In x N (up to X =0.42) have been fabricated on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at 500°C. The properties of the films have been studied by the reflection high-energy electron diffraction technique, X-ray diffraction, and electrical and optical measurements. The fundamental absorption edge of the film decreases linearly with composition (up to X =0.42) from 3.20 eV to 2.01 eV at room temperature.