A 50-GHz 0.25-μm implanted-base high-energy implanted-collector complementary modular BiCMOS (HEICBiC) technology for low-power wireless communication VLSIs

Abstract

A 0.25-/spl mu/m modular high-energy implanted complementary BiCMOS (HEICBiC) technology has been developed for wireless-communication VLSIs. The technology demonstrates a high f/sub T/=52 GHz and a high f/sub T/BV/sub CEO/=160 GHz-V for single-poly emitter NPN transistors and a high f/sub T/=10.7 GHz for implanted-emitter PNP transistors. It is one of the best results for single-poly BiCMOS/bipolar technologies without an epitaxial buried collector. In comparison with 0.25-/spl mu/m NMOS, HEICBiC shows lower power consumption and higher RF performance.