2002 · 18 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Thin FilmsSilicon MaterialsVery-large-scale Integration LayoutCurrent DensityFully Depleted Silicon-on-insulator TransistorsSelf-aligned StructuresSilicon Thin FilmsSilicon-on-insulator Technology
Fabrication of MOSFETs on the sidewall of ultra-thin silicon pillars has been shown. The structures employ a self-aligned drain to enable the use of minimum definable pillar widths. Additionally by moving to a vertical structure, the high current density of surrounding gate MOSFETs can be achieved on conventional bulk substrates, and self-aligned gates can be maintained. These devices exhibit near ideal subthreshold slopes and low DIBL values, making them ideal for low power applications.