Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration

Abstract

The barrier heights of several n-InAlAs/metal Schottky contacts are discussed. A thin-Pt/Ti/Pt Au multilayer gate is proposed for InP-based InAlAs/InGaAs HEMTs. Its Schottky barrier height was measured as 0.83 eV, and it shows good threshold voltage stability. Performance measurements of an enhancement-mode HEMT fabricated using a 1.1- mu m-long multilayer gate indicate a threshold voltage of 0.05 V and a transconductance of 540 mS/mm.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>