Concepedia

Publication | Closed Access

Thermal distribution in amorphous InSnZnO thin‐film transistor

DOI

11

Citations

0

References

2013

Year

Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa,
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Abstract

Abstract We have investigated thermal distribution of an amorphous InSnZnO thin‐film transistor (TFT) under voltage stress by using thermal imaging system. To clarify an influence of only self‐heating phenomenon on reliability, we have focused on a channel scale dependence of heating. As the result, heating effect were strongly depended on channel scale and showed two types of dependences on channel length and width. When positive bias stress was applied to TFT, severe threshold voltage shift and high heating temperature were observed for wider TFT. Moreover, reliability under voltage stress was seems to be affected by accumulation of heating in wider TFT. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)