Satoshi Urakawa

Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect

Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka et al. · Applied Physics Letters · 2013 · 89 citations · Full text

Engineering, Thin-film Transistor, Hot Carrier Effect +16

Effect of contact material on amorphous InGaZnO thin-film transistor characteristics

Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo et al. · Japanese Journal of Applied Physics · 2014 · 41 citations

Engineering, Semiconductor Device, Semiconductors +16

Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress

Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo et al. · ECS Journal of Solid State Science and Technology · 2014 · 39 citations · Full text

Materials Science, Electrical Engineering, Bias Stress +12

Analysis of electronic structure of amorphous InGaZnO/SiO2 interface by angle-resolved X-ray photoelectron spectroscopy

Yoshihiro Ueoka, Yasuaki Ishikawa, Naoyuki Maejima et al. · Journal of Applied Physics · 2013 · 25 citations

Materials Science, Ii-vi Semiconductor, Engineering +13

Thermal analysis for observing conductive filaments in amorphous InGaZnO thin film resistive switching memory

Keisuke Kado, Mutsunori Uenuma, Sharma Kriti et al. · Applied Physics Letters · 2014 · 13 citations

Engineering, Phase Change Memory, Conductive Filaments +16