Manufacturable and Reliable 0.1 μm AlSb/InAs HEMT MMIC Technology for Ultra-Low Power Applications

Abstract

This paper describes a manufacturable and reliable 0.1 μm AlSb/InAs MMIC technology for ultra-low power applications. AlSb/InAs HEMTs have been demonstrated with only one-tenth power dissipation of conventional InAlAs/InGaAs/InP HEMTs. The uniform DC and RF performance of AlSb/InAs HEMTs have been demonstrated on 3-inch GaAs substrates. The further demonstration of reliable AlSb/InAs HEMT technology warrants the successful insertion of AlSb/InAs HEMT MMICs for military and space applications with ultra-low power requirements.