Journal of Electron Microscopy · 1978 · 17 citations · 0 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsMicroelectronicsSemiconductor DevicesElectron Beam LithographyElectron MicroscopyNanoelectronicsGunn DiodesPulsed Electron BeamsScanning Electron MicroscopyScanning Electron Microscopy AnalysisScanning Electron Microscopy Surface Analysis
The stroboscopic SEM has been developed to observe the two-dimensional dynamic voltage contrast images of semiconductor devices in the nanosecond and picosecond regions. It consists of a usual SEM and a pulse gate which is inserted between the electron gun and the condenser lens. The shortest beam pulse width is 0.2 ps. Some micrographs are shown for a 1 GHz Gunn diode and a simple 8 MHz digital IC.