Pushing conventional SiGe HBT technology towards 'dotfive' terahertz

Abstract

This paper presents an overview of the millimeter-wave dedicated 130nm SiGe BiCMOS technology used by STMicroelectronics as a starting point for DOTFIVE Project developments, and achievements during the first two years of the Project, which culminate in the demonstration of an intermediate 400GHz f MAX SiGe HBT process, with good device control and reproducibility.